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| Inchange Semiconductor Product Specification Silicon NPN Power Transistors TIP150/151/152 DESCRIPTION With TO-220C package DARLINGTON APPLICATIONS For use in automotive ignition,switching and motor control applications PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter DESCRIPTION Absolute maximum ratings(Tc=25ae ) SYMBOL VCBO PARAMETER CONDITIONS TIP150 TIP151 Collector-base voltage VCEO HAN INC Collector-emitter voltage Emitter-base voltage Collector current-DC Collector current-Pulse Base current-DC SEM GE TIP152 TIP150 TIP151 TIP152 Open emitter OND IC TOR UC VALUE 300 350 400 300 350 400 UNIT V Open base V VEBO IC ICM IB PC Tj Tstg Open collector 8 7 10 1.5 V A A A W ae ae Collector power dissipation Junction temperature Storage temperature TC=25ae 80 150 -65~150 THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal resistance junction to case VALUE 1.56 UNIT ae /W Inchange Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25ae unless otherwise specified PARAMETER TIP150 V(BR)CEO Collector-emitter breakdown voltage TIP151 TIP152 TIP150 V(BR)CBO Collector-base breakdown voltage TIP151 TIP152 VCEsat-1 VCEsat-2 VCEsat-3 VBE sat-1 VBE sat-2 Collector-emitter saturation voltage Collector-emitter saturation voltage Collector-emitter saturation voltage Base-emitter saturation voltage Base-emitter saturation voltage TIP150 TIP151 IC=1A ,IB=10mA IC=2A ,IB=100mA IC=5A ,IB=250mA IC=2A ,IB=100mA IC=5A ,IB=250mA IC=1mA, IE=0 IC=10mA, IB=0 CONDITIONS SYMBOL TIP150/151/152 MIN 300 350 400 300 350 400 TYP. MAX UNIT V V 1.5 1.5 2.0 V V V V V ICEO Collector cut-off current IEBO hFE-1 hFE-2 hFE-3 VF COB Emitter cut-off current DC current gain DC current gain DC current gain INCH ANG TIP152 EMIC ES VCE=350V, IB=0 VCE=400V, IB=0 VEB=8V; IC=0 IC=2.5A ; VCE=5V IC=5A ; VCE=5V IC=7A ; VCE=5V IF=7A VCE=300V, IB=0 DUC ON 150 50 15 TOR 2.3 250 |I 15 2.2 A mA Diode forward voltage Output capacitance 3.5 150 V pF IE=0 ; VCB=10V;f=1MHz Switching times td tr ts tf Delay time Rise time Storage time Fall time VCC=250V; IC=5A IB1=-IB2=250mA tp=20|I s;Duty CycleU 0.03 0.18 2.0% 3.5 1.6 |I |I |I |I s s s s 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE TIP150/151/152 SEM GE HAN INC OND IC TOR UC Fig.2 Outline dimensions 3 |
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